Gebruiksaanwijzing /service van het product CY7C1310BV18 van de fabrikant Cypress Semiconductor
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18-Mbit QDR™-II SRAM 2-W ord Burst Architecture CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document #: 38-05619 Rev .
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 2 of 29 Logic Block Diagram (CY7C1310BV18) Logic Block Diagram (CY7C1910BV18) 1M x 8 Array CLK A (19:0) Gen. K K Control Logic Address Register D [7:0] Read Add. Decode Read Data Reg.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 3 of 29 Logic Block Diagram (CY7C1312BV18) Logic Block Diagram (CY7C1314BV18) 512K x 18 Array CLK A (18:0) Gen. K K Control Logic Address Register D [17:0] Read Add.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 4 of 29 Pin Configuration The pin configuration for CY7C1310BV18, CY7C1910 BV18, CY7C1312BV18, and CY7 C1314BV18 follow .
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 5 of 29 CY7C1312BV18 (1M x 18) 123456789 10 11 A CQ NC/144M NC/36M WPS BWS 1 K NC/28 8M RPS A NC/72M CQ B NC Q9.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 6 of 29 Pin Definitions Pin Name IO Pin Description D [x:0] Input- Synchronous Data Input Signals. Sampled on the rising edge of K and K clocks during val id write opera tions.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 7 of 29 CQ Echo Clock CQ Referenced with Respect to C . This is a free - running clock and is synchronized to the Input clock for output data (C) of the QDR-II. In the single clock mode , CQ is generated wi th respect to K.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 8 of 29 Functional Overview The CY7C1310BV18, CY7C1910BV18, CY7C1312 BV18, and CY7C1314BV18 are synchronous pipelined Burst SRAMs equipped with a read port and a write p ort.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 9 of 29 Programmable Impedan ce An external resistor , RQ, must be connected between the ZQ pin on the SRAM and V SS to allow the SRAM to adjust its output driver impedance.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 10 of 29 T ruth T able The truth table for CY7C1310BV18, CY7C1910BV 18, CY7C1312BV18, and CY7C1314BV18 follows. [2, 3, 4, 5, 6, 7] Operation K RPS WPS DQ DQ Write Cycle: Load address on the rising ed ge of K ; input write data on K and K rising edges.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 1 1 of 29 Write Cycle Descriptions The write cycle description tabl e for CY7C1910BV18 follows. [2, 8] BWS 0 K K Comments L L–H – During the data portion of a write sequence, the single b yte (D [8:0] ) is written into the device.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 12 of 29 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan T est Access Port (T AP) in the FBGA p ackage. This part is fully comp liant with IEEE S tandard #1 149.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 13 of 29 IDCODE The IDCODE instruction loads a vendor-specific, 32-bi t code into the instruction re gister .
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 14 of 29 T AP Controller St ate Diagram The state diagram for the T AP controller follows.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 15 of 29 T AP Controller Block Diagram T AP Electrical Characteristics Over the Operating Range [10, 1 1, 12] Parameter Description T est Conditions Min Max Unit V OH1 Output HIGH V oltage I OH = − 2.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 16 of 29 T AP AC Switching Characteristics Over the Operating Range [13, 14] Parameter Description Min Max Unit.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 17 of 29 Identification R egi ster Definitions Instruction Field Va l u e Descriptio n CY7C1310BV18 CY7C1910BV18 CY7 C1312BV18 CY7C1314BV18 Revision Numb er (31:29) 000 000 000 000 V ersion number .
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 18 of 29 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 27 1 1H 54 7B 81 3G 1.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 19 of 29 Power Up Sequence in QDR-II SRAM QDR-II SRAMs must be powered up and initialized in a predefined manner to prevent unde fined operations. Power Up Sequence ■ Apply power and drive DO FF either HIGH or LOW (all other inputs can be HIGH or LOW).
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 20 of 29 Maximum Ratings Exceeding maximum ratin gs may impair the useful life o f the device. These user guidelines are not teste d. S torage T emperature ......
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 21 of 29 I SB1 Automatic Power Down Current Max V DD , Both Ports Deselected, V IN ≥ V IH or V IN ≤ V IL f .
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 22 of 29 Cap acit ance T ested initially and after any design or process change that may affect these parameters. Parameter Description T est Condition s Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 1.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 23 of 29 Switching Characteristics Over the Operating Range [20, 21] Cypress Parameter Consor tium Parameter De.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 24 of 29 Switching W aveforms Figure 5. Read/Write/Deselect Sequence [2 6, 27, 28 ] K 1 2 34 5 8 10 6 7 K RPS W.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 25 of 29 Ordering Information Not all of the speed, package, and temper ature ranges are available. Please cont act your local sale s representative or visit www .
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 26 of 29 167 CY7C1310BV18-167BZC 51-85180 165-Ball Fine Pi tch Ball Grid Array (13 x 15 x 1.4 mm) Commercial CY7C1910BV18-167BZC CY7C1312BV18-167BZC CY7C1314BV18-167BZC CY7C1310BV18-167BZXC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 27 of 29 Package Diagram Figure 6. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180 A 1 PIN 1 CORNER 15.00±0.10 13.00±0.10 7.00 1.00 Ø0.50 (165X) Ø 0 . 2 5MCAB Ø0.
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Document #: 38-05619 Rev . *F Page 28 of 29 Document History Page Document Title: CY7C1310BV18/CY7C1910BV18/CY7C1312BV18 /C Y7C1314BV18, 18-Mbit QDR™-II SRAM 2-Word Burst Architecture Document Number: 38-05619 Rev .
Document #: 38-05619 Rev . *F Revised June 2, 2008 Page 29 of 29 QDR RAMs and Qua d Data Ra te RA Ms comprise a ne w fam i ly of pr od uct s developed by Cypress, Hit a chi, IDT , NE C , an d S am s un g. A l l p r oduct and company names mentioned in this d ocume nt a re the tradem arks of their r es pective hold ers.
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