Gebruiksaanwijzing /service van het product CY7C1146V18 van de fabrikant Cypress
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CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 18-Mbit DDR-II+ SRAM 2-W ord Burst Architecture (2.0 Cycle Read Latency) Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-06621 Rev .
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 2 of 27 Logic Block Diagram (CY7C1 146V18) Logic Block Diagram (CY7C1 157V18) CLK A (19:0) Gen. K K Control Logic Address Register Read Add. Decode Read Data Reg.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 3 of 27 Logic Block Diagram (CY7C1 148V18) Logic Block Diagram (CY7C1 150V18) CLK A (18:0) Gen. K K Control Logic Address Register Read Add. Decode Read Data Reg.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 4 of 27 Pin Configurations CY7C1 146V18 (2M x 8) 165-Ball FBGA (13 x 15 x 1.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 5 of 27 Pin Configurations (continued) CY7C1 148V18 (1M x 18) 165-Ball FBGA (13 x 15 x 1.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 6 of 27 Pin Definitions Pin Name IO Pin Description DQ [x:0] Input Output- Synchronous Data Input Output Signal s . Inputs are sampled on the rising edge of K an d K clocks when write operations are val id.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 7 of 27 DOFF Input DLL T urn Off − Active LOW . Connecting this pin to g round turns off the DLL inside the device. The timings in the DLL turned off operation are different from those listed in this data sheet.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 8 of 27 Functional Overview The CY7C1 146V18, CY7C1 1 57V18, CY7C1 148V18, and CY7C1 150V18 are syn chronous pipelined Burst SRAMs equipped with a DDR inte rface.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 9 of 27 echo clock and follows the ti ming of any data pin.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 10 of 27 Write Cycle Descriptions The write cycle descriptions of CY7C1 146V18 and CY7C1 148V18 follows.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 1 1 of 27 The write cycle descriptions of CY7C1 148 V18 follows, [3, 9] BWS 0 BWS 1 BWS 2 BWS 3 K K Comme.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 12 of 27 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan test access port (T AP) in the FBGA package. This part is fully comp liant with IEEE S tandard 1 14 9.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 13 of 27 IDCODE The IDCODE instruction causes a vendor-speci fic, 32-bit code to be loaded into the instruction re gister .
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 14 of 27 T AP Controller St ate Diagram Figure 2 shows the tap controller state diagram.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 15 of 27 T AP Controller Blo ck Diagram Figure 3. T a p Controller Block Diagram T AP Electrical Characteristics The T ap Electrical Characteristics ta ble over the operati ng rang e follows.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 16 of 27 T AP AC Switchi ng Characteristics The T ap AC Switching Characteristics ta ble over the operati ng rang e follows.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 17 of 27 Identification Regi ster Definitions Instruction Field Va l u e Description CY7C1 146V18 CY7C1 157V18 CY7C1 148V18 CY7C 1 150V18 Revision Number (31:29) 000 000 000 000 V ersion number .
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 18 of 27 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 27 1 1H 54 7B 8.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 19 of 27 Power Up Sequence in DDR-II+ SRAM During Power Up, when the DOFF is tied HIG H, the DLL gets locked after 2048 cycles of st able clock. DDR-II+ SRAMs must be powered up and initialized in a predefin ed manner to prevent undefined operations.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 20 of 27 Maximum Ratin gs Exceeding maximum ratings may shorten the useful life of the device. These user guid elines are not tested. S torage T emperature .
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 21 of 27 Cap acit ance T ested initially and after any design or proc ess change that may affect these parameters . Parameter Descriptio n T est Conditions Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 1.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 22 of 27 Switching Characteristics Over the operating range [21, 22] Cypress Parameter Consortium Paramet.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 23 of 27 Switching W aveforms Read/Write /Deselect Sequence Figure 7.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 24 of 27 Ordering Information Not all of the speed, package and tem perature ranges are availabl e. Contac t your local sales representative or visit www .cypress.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 25 of 27 300 CY7C1 146V18-300BZC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Commercial CY7C1 157V18-300BZC CY7C1 148V18-300BZC CY7C1 150V18-300BZC CY7C1 146V18-300BZXC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.
CY7C1 146V18, CY7C1 157V18 CY7C1 148V18, CY7C1 150V18 Document Number: 001-06621 Rev . *D Page 26 of 27 Package Diagram Figure 8. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-8 5180 A 1 PIN 1 CORNER 15.00±0.10 13.00±0.10 7.00 1.00 Ø0.50 (165X) Ø0.25 M C A B Ø0.
Document Number: 001-06621 Rev . *D Revised March 06, 2008 Page 27 of 27 QDR™ is a trademark of Cypress Semicond uctor Corp. QDR RAMs and Quad Data Rate RAMs comprise a new family of prod ucts developed by Cypress, IDT , NEC, Renesas, and Samsung.
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