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36-Mbit DDR-II SRAM 2-W ord Burst Architecture CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 38-05616 Rev .
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 2 of 31 Logic Block Diagram (CY7C1416A V18) Logic Block Diagram (CY7C1427A V18) Wri te Reg Wri te Reg CLK A (20:0) Gen. K K Control Logic Address Register Read Add.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 3 of 31 Logic Block Diagram (CY7C1418A V18) Logic Block Diagram (CY7C1420A V18) Wri te Reg Writ e Reg CLK A (20:0) Gen. K K Control Logic Address Register Read Add.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 4 of 31 Pin Configuration The pin configuration for CY7C1416A V18, CY7C1427 A V18, CY7C1418A V18, and CY7C1 420A V18 follow . [1] 165-Ball FBGA (15 x 17 x 1 .
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 5 of 31 CY7C1418A V18 (2M x 18) 123456789 10 11 A CQ NC/72M A R/W BWS 1 K NC/14 4M LD AA C Q B NC DQ9 .
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 6 of 31 Pin Definitions Pin Name IO Pin Descripti on DQ [x:0] Input Output- Synchronous Dat a Input Output S ignals . Inputs are sampled on the rising edge of K and K clocks during valid write operations.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 7 of 31 CQ Output Clock CQ Referenced with Respect to C . This is a free-running clock and is synchronized to the input clock for output data (C) of the DDR-II.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 8 of 31 Functional Overview The CY7C1416A V18, CY7C142 7A V18, CY7C1418A V18, and CY7C1420A V18 are synchronous pipel ined Burst SRAMs equipped with a DDR interface.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 9 of 31 Depth Exp ansion Depth expansion requires replicating the LD control signal for each bank. All other co ntrol signals can be common between banks as appropriate.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 10 of 31 T ruth T able The truth table for the CY7C1416A V18, CY7C1427A V18, CY7C1418 A V18, and CY7C1420A V18 follows.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 1 1 of 31 Write Cycle Descriptions The write cycle description tabl e for CY7C1427A V18 follows. [2, 8] BWS 0 K K Comments L L–H – During the Data portion of a write sequence, the single byte (D [8:0] ) is written int o the de vi ce .
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 12 of 31 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan T est Access Port (T AP) in the FBGA p ackage. This part is fully comp liant with IEEE S tandard #1 149.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 13 of 31 IDCODE The IDCODE instruction loads a vendor-specific, 32-bi t code into the instruction re gister .
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 14 of 31 T AP Controller St ate Diag ram The state diagram for the T AP controller follows.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 15 of 31 T AP Controller Block Diagram T AP Electrical Characteristics Over the Operating Range [10, 1 1, 12] Parameter Description T est Conditions Min Max Unit V OH1 Output HIGH V oltage I OH = − 2.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 16 of 31 T AP AC Switching Characteristics Over the Operating Range [13, 14] Parameter Description Min.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 17 of 31 Identification R egi ster Definitions Instruction Field Va l u e De scription CY7C1416A V18 CY7C1427A V1 8 CY7C1418A V18 CY7C1420A V18 Revision Numb er (31:29) 000 000 000 000 V ersion numbe r .
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 18 of 31 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bum p ID 0 6R 28 10G 56 6.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 19 of 31 Power Up Sequence in DDR-II SRAM DDR-II SRAMs must be power ed up and initialized in a predefined manner to prevent unde fined operations.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 20 of 31 Maximum Ratings Exceeding maximum ratin gs may impair the useful life o f the device. These user guidelines are not teste d. S torage T emperature .
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 21 of 31 I DD [19] V DD Operating Supply V DD = Max, I OUT = 0 mA, f = f MAX = 1/t CYC 200MHz (x8) 600.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 22 of 31 Cap acit ance T ested initially and after any design or process change that may affect these parameters. Parameter Description T est Conditions Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 1.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 23 of 31 Switching Characteristics Over the Operating Range [20, 21] Cypress Parame- ter Consor- tium .
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 24 of 31 Output T imes t CO t CHQV C/C Clock Rise (or K/K in single clock mode) to Data V a lid – 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns t DOH t CHQX Data Output Hold af ter Output C/C Clock Rise (Active to Active) –0.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 25 of 31 Switching W aveforms Figure 5. Read/Write/Deselect Sequence [2 6, 27, 28 ] READ READ READ NOP.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 26 of 31 Ordering Information Not all of the speed, package and temperature ranges are ava ilable. Please contact your local sales representative or visit www .
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 27 of 31 250 CY7C1416A V18-250BZC 51-85195 1 65-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 28 of 31 167 CY7C1416A V18-167BZC 51-85195 1 65-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 29 of 31 Package Diagram Figure 6. 165-ball FBGA (15 x 17 x 1.
CY7C1416A V18, CY7C1427A V18 CY7C1418A V18, CY7C1420A V18 Document Number: 38-05616 Rev . *F Page 30 of 31 Document History Page Document Title: CY7C1416A V18, CY7C1427A V18, CY7C1418A V18, CY7C1420A V18, 36-Mbit DDR-II SRAM 2-Word Burst Architecture Document Number: 38-05616 Rev .
Document Number: 38-05616 Rev . *F Revised January 29, 2009 Page 31 of 31 DDR RAMs and QDR RAMs comprise a new fam ily of products develope d by Cypress, Hitachi, IDT , Micron, NEC, a nd Samsung. All p rodu ct and company names mentione d in this document are the trademarks of the ir respective holders.
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